V6As2 is a binary intermetallic semiconductor compound composed of vanadium and arsenic, belonging to the class of transition metal pnictides. This material is primarily of research and experimental interest, investigated for its potential in electronic and thermoelectric applications due to the electronic properties imparted by the vanadium-arsenic system. While not widely commercialized in mainstream engineering, V6As2 and related vanadium arsenide phases are explored in materials science for potential use in high-temperature electronics, power devices, and thermoelectric energy conversion where conventional semiconductors reach performance limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 193.0 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 100.5 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00180 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4100 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data