V4GeSe8 is an experimental intermetallic compound combining vanadium with germanium and selenium, representing a research-phase material in the broader family of transition metal chalcogenides. This compound is primarily of interest in materials science research for its potential electronic and structural properties rather than established industrial production. The material belongs to an emerging class of multinary compounds being investigated for thermoelectric applications, photovoltaic devices, and solid-state electronics where the combination of multiple elements can engineer band gaps and carrier transport properties unavailable in binary systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2034 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 4.325 | µB | — | ||
Seebeck Coefficient(S) | -53.74 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6784 | eV/atom | — |