V4Zn2O10 is an experimental mixed-metal oxide semiconductor compound containing vanadium and zinc. This material belongs to the family of transition metal oxides studied for potential optoelectronic and catalytic applications, though it remains primarily a research-phase material without established industrial production. The combination of vanadium and zinc oxides suggests potential interest in photocatalysis, gas sensing, or energy storage device research, where mixed-valence metal oxides often exhibit enhanced electronic properties compared to single-component oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,726.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,226.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01940 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.224 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data