V4 Zn1 O8 — Properties & Data | MatWorld

V4 Zn1 O8

semiconductor

· V4 Zn1 O8

V4Zn1O8 is a mixed-metal oxide semiconductor compound combining vanadium and zinc oxides, likely of interest for its electronic and electrochemical properties at the intersection of two industrially important oxide systems. While not a widely commercialized material, compounds in this vanadium-zinc oxide family are being investigated in academic and applied research for their potential in energy storage, catalysis, and sensing applications where mixed-valence metal oxides offer advantages over single-component alternatives.

battery electrodes and energy storagecatalysis and chemical conversiongas sensing devicesthin-film semiconductor researchelectrochromic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00210	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.293	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V4 Zn1 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control