V₄O₈ is a mixed-valence vanadium oxide semiconductor belonging to the Magnéli phase family of reduced vanadium oxides. This compound exhibits semiconductor behavior and is primarily explored in research contexts for applications leveraging vanadium oxide's tunable electronic properties and phase transition characteristics. As a metastable or intermediate vanadium oxide composition, V₄O₈ is notable for its potential in energy storage systems and catalytic processes where vanadium's multiple oxidation states provide functional advantages over simpler binary oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,480.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 8,078.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00310 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.397 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data