V4 O7 F5
semiconductorV4O7F5 is an experimental vanadium oxide fluoride compound belonging to the mixed-valence transition metal oxide family, synthesized primarily for research into novel semiconductor and electrochemical materials. While not yet established in mainstream industrial applications, this material is investigated for potential use in energy storage systems, catalysis, and advanced electronic devices, where the combination of vanadium's variable oxidation states and fluorine doping could enable enhanced ionic conductivity or tunable electronic properties. The material represents an emerging class of fluorine-substituted oxides being explored to overcome limitations of conventional vanadium oxide phases in rechargeable battery technologies and solid-state ionics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |