V4O6 is a mixed-valence vanadium oxide semiconductor compound that belongs to the family of reduced vanadium oxides. This material is primarily of research interest for studying electronic transport phenomena and phase transitions in strongly correlated oxide systems, with potential applications in emerging technologies requiring tunable electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33,816.4 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 16,176.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00300 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.485 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data