V₄O₂F₁₀ is an inorganic vanadium oxyfluoride compound belonging to the class of mixed-anion semiconductors. This is a research-phase material currently studied for its potential in functional ceramics and electrochemical applications, rather than an established commercial semiconductor. Vanadium oxyfluorides are of interest to researchers exploring novel ionic conductors, battery materials, and catalytic systems where the combined oxygen and fluorine coordination can create unique crystal structures and electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 68.57 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 35.48 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00510 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.914 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data