V₄O₁₀ is a vanadium oxide semiconductor compound belonging to the family of transition metal oxides, which exhibit mixed-valence properties and variable conductivity depending on oxygen stoichiometry. This material is primarily of research interest for energy storage and catalytic applications, particularly in vanadium redox flow batteries and as a catalyst precursor for selective oxidation reactions in the chemical industry. Its notable advantage over simpler vanadium oxides (VO₂, V₂O₅) is its intermediate oxidation state, which can enhance electron transfer kinetics and electrochemical stability in certain electrochemical systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,242.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,793.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.017 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.355 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data