V4In2C2 is an experimental ternary carbide semiconductor composed of vanadium, indium, and carbon. This material belongs to the family of transition metal carbides and represents ongoing research into novel wide-bandgap semiconductors with potential for high-temperature and high-power applications. While not yet commercialized at scale, ternary carbides in this class are being investigated for their unique electronic properties and thermal stability, offering potential advantages over conventional binary semiconductors in extreme operating environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,820.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 14,327.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00240 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3610 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data