V4Ge1Se8 is a mixed-metal selenide semiconductor compound combining vanadium and germanium in a selenium matrix, representing an emerging material in the chalcogenide semiconductor family. This composition falls within research-stage materials exploration, likely investigated for its potential in thermoelectric applications, optoelectronic devices, or phase-change memory systems where multi-element chalcogenides offer tunable electronic and thermal properties. The material's value lies in its potential to enable lower-cost or higher-performance alternatives to conventional single-element semiconductors, though industrial adoption remains limited pending further characterization and manufacturing scalability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07250 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6780 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data