V₄As₄ is a compound semiconductor combining vanadium and arsenic, representing a binary intermetallic or chalcogenide-class material of research interest. This composition belongs to the broader family of transition metal pnictogens and is typically investigated for its electronic band structure and potential semiconducting behavior, though it remains largely in the exploratory research phase rather than established industrial production. Engineers and materials researchers consider such vanadium-arsenic compounds for emerging applications in quantum materials, thermoelectric devices, and next-generation solid-state electronics where unconventional electronic properties are sought.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 136.0 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 87.60 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00730 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4710 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data