V3GaN is a vanadium gallium nitride compound that belongs to the refractory metal-ceramic family, combining transition metal and wide-bandgap semiconductor characteristics. This material is primarily of research and development interest for high-temperature and high-frequency electronic applications where extreme thermal stability and electrical properties are required. The vanadium-nitride-gallium system remains an emerging material with potential applications in advanced semiconductor devices, though industrial adoption is limited compared to established nitride-based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2371 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7280 | eV/atom | — |