V₃O₆ is a mixed-valence vanadium oxide semiconductor compound belonging to the family of transition metal oxides with potential applications in electronic and electrochemical devices. This material is primarily of research and developmental interest rather than widely commercialized, studied for its semiconductor properties and potential use in energy storage, catalysis, and thin-film electronics where vanadium oxides offer tunable electronic behavior. Engineers would consider vanadium oxide systems when seeking materials with variable oxidation states, ionic conductivity, or redox-active properties that can be engineered through composition and processing.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,766.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 6,501.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00990 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.450 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data