V₃Co₅O₁₆ is a mixed-valence oxide semiconductor composed of vanadium and cobalt in a complex layered crystal structure, belonging to the family of transition metal oxides. This material is primarily of research and development interest rather than established in high-volume production, with potential applications in energy storage, catalysis, and electronic devices where mixed-metal oxidic phases offer tunable electrical and electrochemical properties. The cobalt-vanadium oxide system is notable for its ability to exhibit variable oxidation states and structural flexibility, making it attractive for emerging technologies where conventional single-oxide semiconductors may lack the necessary functional properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4721 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.627 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data