V2Bi4O11 is a bismuth vanadate ceramic compound that functions as a semiconductor material. This oxide ceramic belongs to the family of mixed-metal oxides and is primarily investigated for photocatalytic and electrochemical applications where its bandgap and crystal structure enable light-driven or electrochemical reactions. The material is largely in the research and development phase rather than mature industrial production, with potential advantages in environmental remediation and energy conversion applications where bismuth vanadates have shown promise as alternatives to titanium dioxide–based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2464 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.000 | eV | — | ||
| ↳ | 2.275 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -361.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1136 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.799 | eV/atom | — |