V₂Zn₂Si₂O₁₀ is an oxy-silicate compound containing vanadium, zinc, and silicon in a mixed-valence ceramic structure, classified as a semiconductor material. This compound belongs to the family of complex silicates and is primarily of research interest for optoelectronic and solid-state applications where the vanadium oxidation states enable electronic activity. As an emerging material, it shows potential in photocatalysis, optical devices, and energy conversion systems where the band structure properties of vanadium-containing silicates can be exploited, though it remains less established than conventional semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,409.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 10,215.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00430 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.385 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data