V2Zn1N2 is a ternary nitride semiconductor compound combining vanadium and zinc elements in a crystalline structure. This material belongs to the transition metal nitride family, which has attracted research interest for potential applications in wide-bandgap semiconductor devices and advanced electronic/photonic systems. As a relatively uncommon ternary composition, V2Zn1N2 represents an exploratory material within the broader class of metal nitride semiconductors, offering potential advantages in thermal stability and electronic properties compared to binary nitride alternatives, though industrial adoption remains limited and further development would be needed for commercial viability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,164.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,206.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00720 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2300 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data