V2Te2 is a layered transition metal dichalcogenide semiconductor compound composed of vanadium and tellurium. This material is primarily of research interest for next-generation electronic and optoelectronic devices, where its layered crystal structure and tunable electronic properties make it a candidate for applications requiring reduced dimensionality and enhanced carrier mobility compared to conventional bulk semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 69.90 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 16.84 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01110 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1400 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data