V2 Te2 O7 F2 — Properties & Data | MatWorld

V2 Te2 O7 F2

semiconductor

· V2 Te2 O7 F2

V2Te2O7F2 is an experimental mixed-valence vanadium tellurite fluoride compound belonging to the family of complex metal oxide semiconductors. This material represents research into fluorine-doped tellurite systems, which are investigated for photonic and electronic applications where the combination of tellurium oxides with vanadium redox states and fluorine doping offers tunable band gaps and potential for enhanced charge transport. Limited industrial deployment currently exists; the material is primarily of interest in academic and advanced materials development settings for exploring new semiconductor compositions with potential applications in optoelectronics and solid-state devices.

experimental semiconductor researchphotonic materials developmentband gap engineeringvanadium oxide systemsfluorine-doped oxidessolid-state device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6553	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.946	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V2 Te2 O7 F2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control