V2 Tc1 Ru1
semiconductorV2Tc1Ru1 is an experimental intermetallic compound combining vanadium, technetium, and ruthenium in a fixed stoichiometric ratio, classified as a semiconductor. This research-phase material belongs to the family of refractory transition-metal intermetallics, which are typically investigated for extreme-environment applications where conventional alloys degrade. While not yet commercialized, materials in this family are pursued for their potential to combine high-temperature stability with semiconductor properties, though technetium's radioactivity and cost severely limit practical development; such compounds are primarily of academic interest for understanding structure–property relationships in multi-element refractory systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |