V₂Sn₂P₂O₁₀ is a mixed-metal phosphate semiconductor compound combining vanadium, tin, and phosphorus oxides in a layered crystal structure. This material belongs to the family of transition metal phosphates—a research-active class of compounds being explored for energy storage, photocatalysis, and ion-conduction applications where the combination of redox-active vanadium and tin provides tunable electronic and ionic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00600 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.161 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data