V₂O₃F is a vanadium oxide fluoride compound belonging to the semiconductor class, combining vanadium oxide's electronic properties with fluorine doping to modify electrical and structural characteristics. This is primarily a research-stage material studied for its potential in electronic devices and energy storage applications, where fluorine incorporation can enhance ionic conductivity, electrochemical stability, or bandgap tunability compared to undoped vanadium oxides. The material family is of interest in advanced cathode materials, thin-film electronics, and solid-state ion conductors where vanadium's variable oxidation states and fluorine's electronegativity offer synergistic benefits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 201.6 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 95.73 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01040 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.671 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data