V₂O₂F₆ is a vanadium oxyfluoride semiconductor compound that combines vanadium oxide chemistry with fluorine incorporation, creating a mixed-anion system. This is primarily a research material studied for its potential in electronic and ionic applications; it is not currently established in mainstream industrial production. The material belongs to the broader family of vanadium-based semiconductors and fluoride compounds, which are of interest for energy storage devices, solid-state electrolytes, and specialized electronic components where the combination of transition metal redox activity and fluoride ion conductivity may provide advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,630.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,868.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.860 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.726 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data