V2Ni1Se4 is a ternary transition metal selenide semiconductor compound combining vanadium, nickel, and selenium. This material belongs to the family of layered metal chalcogenides being explored for next-generation electronic and optoelectronic devices, where researchers investigate its potential for thermoelectric power generation, photodetection, and energy storage applications due to its tunable band gap and mixed-metal active sites.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 88.80 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 46.56 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000300 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6150 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data