V2Hg2O6 is an experimental mixed-valence oxide semiconductor containing vanadium and mercury in an ordered crystalline structure. This compound belongs to the family of complex metal oxides under investigation for electronic and photocatalytic applications, though it remains primarily a research material without established commercial production or widespread industrial deployment. The material's potential relevance lies in fundamental studies of semiconductor behavior and catalytic properties, positioning it as a candidate for emerging technologies rather than conventional engineering applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.083 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.811 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data