V2 Cu1 O6

semiconductor

· V2 Cu1 O6

V₂Cu₁O₆ is a mixed-valence vanadium-copper oxide ceramic compound belonging to the family of transition metal oxides with potential semiconductor or mixed-ionic-electronic conductor characteristics. This appears to be a research or exploratory compound rather than a commercial material; it is studied primarily for its electrical and electrochemical properties as part of fundamental investigations into layered oxide systems and potential energy storage or catalytic applications.

energy storage researchbattery electrode materialscatalysis developmentsolid-state electronicsmaterials discoveryexperimental semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00540	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.047	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V2 Cu1 O6 — Properties & Data | MatWorld

V2 Cu1 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control