V₂Co₁O₆ is a mixed-valence oxide semiconductor combining vanadium and cobalt in a layered or complex crystal structure. This is primarily a research material studied for its electronic and magnetic properties rather than an established commercial semiconductor. Interest centers on its potential as a cathode material for energy storage devices, a photocatalyst for environmental remediation, or a component in multiferroic systems where coupling between magnetic and electronic properties is desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,651.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 6,441.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00890 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.097 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data