V1Zn1O3 is a ternary oxide semiconductor compound combining vanadium and zinc oxides, representing a mixed-metal oxide in the vanadium oxide family. This material is primarily of research and development interest for optoelectronic and photocatalytic applications, where the combination of vanadium and zinc oxidation states can enable tunable bandgap properties and enhanced charge carrier dynamics compared to single-component oxides. The material may find utility in emerging applications requiring visible-light activity or selective catalytic performance, though widespread industrial deployment remains limited pending further development of synthesis scalability and performance optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01460 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.750 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data