V₁W₂O₈ is a mixed-valence transition metal oxide semiconductor composed of vanadium and tungsten. This compound belongs to the family of polyoxometalates and layered metal oxides, which are primarily studied for electrochemical and photocatalytic applications due to their tunable electronic structure and redox properties. The material shows particular promise in energy storage, photocatalysis, and gas sensing applications where the synergistic effects of multiple transition metals can enhance performance over single-metal oxide alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.96 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 40.45 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.213 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data