V1 Tc2 Ge1

semiconductor

· V1 Tc2 Ge1

V₁Tc₂Ge₁ is an intermetallic compound combining vanadium, technetium, and germanium in a defined stoichiometric ratio. This is an experimental/research-phase material studied primarily for its potential electronic and structural properties, likely within the broader context of high-entropy alloys or advanced intermetallic phases for extreme-environment applications. The material remains largely confined to laboratory investigation, with potential relevance to applications requiring corrosion resistance, high-temperature stability, or specialized electronic behavior.

research and developmentexperimental intermetallicshigh-temperature materialscorrosion-resistant coatingsadvanced electronics substratesnuclear or aerospace study materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00190	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2520	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V1 Tc2 Ge1 — Properties & Data | MatWorld

V1 Tc2 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control