V1 Si1 Tc2 — Properties & Data | MatWorld

V1 Si1 Tc2

semiconductor

· V1 Si1 Tc2

V₁Si₁Tc₂ is an intermetallic compound combining vanadium, silicon, and technetium in a fixed stoichiometric ratio. This is a research-phase material studied primarily in high-temperature materials science and nuclear applications, as technetium's radioactive nature and scarcity limit practical deployment. The compound belongs to the family of refractory intermetallics being explored for extreme-environment structural use, though it remains largely experimental rather than production-ready.

High-temperature structural researchNuclear materials studyRefractory intermetallic developmentExperimental aerospace applicationsMaterials database reference

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04050	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4340	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V1 Si1 Tc2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control