V1Se2 is a layered transition metal dichalcogenide semiconductor compound composed of vanadium and selenium. This material is primarily investigated in research settings for its electronic and optical properties, belonging to a family of 2D materials with potential applications in next-generation electronic and photonic devices. Compared to more established semiconductors like silicon or gallium arsenide, dichalcogenides offer tunable band gaps, strong light-matter interactions, and the ability to be exfoliated into few-layer or monolayer forms, making them attractive for exploratory work in flexible electronics, photodetection, and quantum device engineering.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48.79 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 33.05 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03390 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7100 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data