VO₂F is an experimental mixed-anion vanadium oxide fluoride compound belonging to the broader family of vanadium-based semiconductors. This material combines oxide and fluoride ligands to create a mixed-valent vanadium system, which is primarily of research interest for investigating how fluorine doping modifies the electronic and structural properties of vanadium oxides. While not yet established in mainstream industrial production, VO₂F and related vanadium compounds are being studied for potential applications in electrochemical energy storage, solid-state electronics, and catalysis, where the ability to tune band structure and redox activity through compositional variation is valuable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,575.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,672.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.380 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.473 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data