V1 N1 is a semiconductor compound, likely a vanadium-nitrogen or vanadium-based intermetallic phase, though its exact composition requires specification. Semiconductors in the vanadium family are of research interest for high-temperature electronics, photovoltaic applications, and transitional metal compounds that may exhibit unique electronic properties bridging metallic and semiconductive behavior. The material's stiffness characteristics suggest potential applications in rigid structural-electronic hybrid devices, though its practical adoption remains limited pending clarification of composition, doping levels, and reproducible synthesis methods.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49,018 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 37,492.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1187 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.317 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data