USbAs — Properties & Data | MatWorld

USbAs

ceramic

· JVASP-17840· USbAs

USbAs is a ternary ceramic compound belonging to the III-V semiconductor family, combining uranium, antimony, and arsenic in a crystalline structure. This material is primarily of research and development interest for advanced semiconductor and optoelectronic applications where extreme radiation hardness and high-temperature stability are required. While not yet widely commercialized, uranium-based compounds like USbAs are explored in nuclear physics, space electronics, and specialized detector systems where conventional semiconductors would degrade rapidly under neutron or gamma radiation.

nuclear radiation detectorsspace electronicshigh-temperature semiconductorsradiation-hardened circuitsexperimental materials researchnuclear facility instrumentation

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	12,674.8	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2500	-	DFT · OptB88vdW
Shear Modulus(G)	8,114.9	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.3591	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	DFT · OptB88vdW
↳	0.000	eV	DFT · TBmBJ
Magnetic Moment(μB)	3.712	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00129	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00127	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-13.73	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	-13.63	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01140	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5136	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

USbAs

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental