UMgO3 is an experimental ternary oxide semiconductor compound combining uranium and magnesium in a 1:1:3 stoichiometric ratio. While not widely commercialized, this material belongs to the family of mixed-metal oxides being investigated for potential optoelectronic and nuclear fuel applications, where its unique electronic structure and radiation tolerance characteristics could offer advantages over conventional semiconductor or ceramic alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.156 | eV | — | ||
Magnetic Moment(μB) | 0.4000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.363 | eV/atom | — |