U2Te2N2 is an experimental ternary compound semiconductor combining uranium, tellurium, and nitrogen elements. This material family is primarily of research interest for investigating novel electronic and structural properties in uranium-based compounds, with potential applications in specialized semiconductor devices where extreme radiation hardness or unique band structure engineering is desired. The compound remains largely in the materials discovery phase rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,242.9 | ksi | — | ||
Shear Modulus(G) | 7,395.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00490 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.350 | eV/atom | — |