U₂Te₂As₂ is an experimental ternary semiconductor compound combining uranium, tellurium, and arsenic in a 1:1:1 stoichiometry. This material belongs to the family of uranium chalcogenide semiconductors and is primarily studied in research contexts for its electronic and structural properties rather than established industrial production. The compound's potential applications center on nuclear materials science, radiation-tolerant electronics, and specialized sensing devices where uranium-based semiconductors may offer advantages in radiation environments or where uranium's unique electronic properties are exploited; however, it remains largely a laboratory material without widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,653.9 | ksi | — | ||
Shear Modulus(G) | 5,519.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6820 | eV/atom | — |