U2 S1 N2 is a semiconductor compound with uranium, sulfur, and nitrogen constituents, likely a research or specialized material rather than a common commercial semiconductor. While its specific composition and synthesis method are not fully specified in standard references, uranium-based semiconductors represent an emerging research area with potential applications in nuclear electronics, radiation detection, and high-energy physics environments where conventional semiconductors would be damaged or unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,323.8 | ksi | — | ||
Shear Modulus(G) | 12,122.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00370 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.761 | eV/atom | — |