U2 Ga2 O5

semiconductor

· U2 Ga2 O5

U₂Ga₂O₅ is an experimental oxide semiconductor compound combining uranium and gallium oxides, belonging to the broader family of mixed-metal oxide semiconductors under active research. This material is primarily of interest in nuclear materials science and advanced semiconductor research rather than established industrial applications, with potential relevance to radiation-tolerant electronics, nuclear fuel chemistry, and high-temperature semiconductor device development where conventional semiconductors would degrade.

radiation-tolerant electronicsnuclear materials researchexperimental semiconductorshigh-temperature device applicationsmixed-metal oxide compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	154.1	GPa	—
Shear Modulus(G)	40.79	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.081	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

U2 Ga2 O5

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control