U2As2S2 is an experimental semiconductor compound belonging to the uranium chalcogenide family, combining uranium with arsenic and sulfur in a layered or mixed-valence structure. Research into this material focuses on its electronic and optical properties for potential photonic and optoelectronic applications, though it remains largely in the development phase with limited commercial deployment. Engineers investigating advanced semiconductor materials for niche applications—such as radiation detection, infrared sensing, or high-temperature electronics—may find this compound of interest as part of the broader uranium chalcogenide research landscape.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,910.7 | ksi | — | ||
Shear Modulus(G) | 9,071.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.215 | eV/atom | — |