U2 As1 N2

semiconductor

· U2 As1 N2

U2As1N2 is an experimental semiconducting compound combining uranium, arsenic, and nitrogen elements, representing research into alternative semiconductor materials beyond conventional silicon and III-V compounds. This material family is primarily of academic and exploratory interest, investigated for potential applications requiring novel electronic or optoelectronic properties distinct from established semiconductor platforms.

experimental semiconductor researchelectronic materials developmenthigh-performance computing explorationradiation-tolerant electronicsadvanced material characterizationcompound semiconductor discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	145.7	GPa	—
Shear Modulus(G)	86.90	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00340	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.454	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

U2 As1 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control