U1 Tl1 O3
semiconductorU1Tl1O3 is an experimental ternary oxide semiconductor combining uranium and thallium with oxygen, representing a rare composition that exists primarily in research contexts rather than established industrial production. This material belongs to the family of mixed-metal oxides and is of interest to materials scientists studying novel electronic and structural properties that may arise from the uranium–thallium interaction. Potential applications would focus on advanced electronics, radiation detection, or specialized photonic devices, though the material remains in early-stage investigation and faces challenges including toxicity concerns (thallium), radioactivity (uranium), and synthesis complexity that currently limit practical engineering adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |