U1O3 is a uranium oxide semiconductor compound that exists primarily in research and experimental contexts rather than established commercial production. This material belongs to the uranium oxide family, which has been studied for nuclear fuel applications, catalysis, and advanced electronic devices due to uranium's variable oxidation states and resulting electronic properties. Interest in uranium oxide semiconductors centers on their potential for high-temperature operation, radiation tolerance, and specialized nuclear or catalytic applications where conventional semiconductors would fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,234.1 | ksi | — | ||
Shear Modulus(G) | 12,567.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.871 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.203 | eV/atom | — |