U1 Ge3 is a uranium-germanium intermetallic compound belonging to the semiconductor class of materials. This ternary or binary compound represents an experimental research material studied for its electronic and structural properties within the broader family of uranium-based semiconductors and actinide materials. While not widely deployed in commercial applications, compounds in this family are of interest for nuclear materials science, advanced electronics research, and fundamental studies of f-electron systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 107.7 | GPa | — | ||
Shear Modulus(G) | 60.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3020 | eV/atom | — |