Tm₄As₄O₁₆ is an arsenic-based mixed-metal oxide compound containing thulium, classified as a semiconductor material. This is a research-phase compound from the rare-earth arsenic oxide family, studied primarily for its electronic and optical properties rather than established commercial applications. The material's potential lies in advanced electronic devices, photonic systems, and specialized sensor applications where rare-earth doping and arsenic-oxide semiconductors offer unique band-gap engineering opportunities compared to conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.781 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.481 | eV/atom | — |