Tm₃Mn₃Ge₃ is an intermetallic compound composed of thulium, manganese, and germanium that exhibits semiconductor behavior. This material belongs to the family of rare-earth-based intermetallics and is primarily of research interest rather than established in high-volume industrial production. The compound is being investigated for potential applications in thermoelectric devices, magnetic materials, and high-temperature electronics where its unique combination of rare-earth and transition-metal constituents may offer advantages in thermal or magnetic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,424.9 | ksi | — | ||
Shear Modulus(G) | 6,264.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00380 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4960 | eV/atom | — |