Tm3In1C1 is a ternary carbide compound combining thulium, indium, and carbon, representing an emerging class of intermetallic carbides with semiconductor properties. This material is primarily of research interest for investigating novel electronic and thermal properties in rare-earth-containing carbide systems, with potential applications in high-temperature electronics and specialty semiconductors where conventional materials reach performance limits. The compound's behavior bridges ceramic hardness characteristics with semiconductor functionality, making it notable for exploratory work in advanced materials rather than established high-volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,164.1 | ksi | — | ||
Shear Modulus(G) | 3,428.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.575 | eV/atom | — |