Tm3 Al1 N1

semiconductor

· Tm3 Al1 N1

Tm3Al1N1 is a ternary nitride semiconductor compound combining thulium, aluminum, and nitrogen in a fixed stoichiometric ratio. This is a research-phase material within the rare-earth aluminum nitride family, investigated for potential optoelectronic and high-temperature semiconductor applications where rare-earth doping of III-nitride systems can enable tunable bandgap and luminescent properties.

experimental optoelectronicsrare-earth doped nitride researchwide-bandgap semiconductorshigh-temperature device developmentquantum materials researchphotonic integrated circuits (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	14,552.1	ksi	—
Shear Modulus(G)	10,680.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02010	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.049	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm3 Al1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control